2N4117 데이터 시트보기 (PDF) - RHOPOINT COMPONENTS

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2N4117

N-Channel Silicon Junction Field-Effect Transistor

RHOPOINT COMPONENTS 

01/99

B-9

2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A

N-Channel Silicon Junction Field-Effect Transistor

¥ Audio Amplifiers

¥ Ultra-High Input Impedance

Amplifiers

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating (to 175°C)

– 40 V

50 mA

300 mW

2 mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Reverse Current

2N4117, 2N4118, 2N4119

2N4117A, 2N4118A, 2N4119A

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

2N4117, 2N4118, 2N4119

2N4117A, 2N4118A, 2N4119A

V(BR)GSS

IGSS

VGS(OFF)

IGSS

Dynamic Electrical Characteristics

Common Source Forward

Transconductance

gfs

Common Source Output Conductance gos

Common Source Input Capacitance Ciss

Common Source Reverse

Transfer Capacitance

Crss

2N4117

2N4117A

2N4118

2N4118A

2N4119

2N4119A

Min Max Min Max Min Max Unit

– 40

– 40

– 40

V

– 10

– 10

– 10 pA

–1

–1

– 1 pA

– 0.6 – 1.8 – 1 – 3 – 2 – 6 V

0.03 0.09 0.08 0.24 0.2 0.6 mA

0.015 0.09 0.08 0.24 0.2 0.6 mA

70 210 80 250 100 330 µS

3

5

10 µS

3

3

3 pF

1.5

1.5

1.5 pF

Process NJ01

Test Conditions

IG = – 1µA, VDS = ØV

VGS = – 20V, VDS = ØV

VGS = – 20V, VDS = ØV

VDS = 10V, ID = 1 nA

VDS = 10V, VGS = ØV

VDS = 10V, VGS = ØV

VDS = 10V, VGS = ØV

VDS = 10V, VGS = ØV

VDS = 10V, VGS = ØV

VDS = 10V, VGS = ØV

f = 1 kHz

f = 1 kHz

f = 1 MHz

f = 1 MHz

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

www.interfet.com

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

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