2N3226 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
일치하는 목록
2N3226 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCE(sat)-1 Collector-emitter saturation voltage IC=3A; IB=0.3A
VCE(sat)-2 Collector-emitter saturation voltage IC=5A ;IB=1.0A
VBE(on) Base-emitter on voltage
IC=3A ; VCE=4V
ICEO
Collector cut-off current
VCE=35V; IB=0
ICBO
Collector cut-off current
VCB=35V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
Product Specification
2N3226
MIN TYP. MAX UNIT
35
V
1.0
V
2.0
V
2.0
V
1.0
mA
0.1
mA
0.1
mA
40
20
2
Share Link: 