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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

1N5550 데이터 시트보기 (PDF) - General Semiconductor

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1N5550
GE
General Semiconductor GE
1N5550 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N5550 THRU 1N5552
FIG. 1 - FORWARD CURRENT DERATING CURVE
5.0
TL, LEAD TEMPERATURE
L = 0.375" (9.5mm)
4.0
3.0
TA, AMBIENT
TEMPERATURE
2.0 P.C.B. MOUNTED,
0.375" (9.5mm) LEAD LENGTH
1.0
RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100
125
TEMPERATURE, °C
0.8 x 0.8 x .040"
(20 x 20 x 1mm)
COPPER
HEATSINKS
150 175 200
200
100
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
TJ=TJ max.
8.3ms SINGLE HALF
SINE-WAVE(JEDEC Method)
10
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
TJ=150°C
10
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=25°C
1
FIG. 4 -TYPICAL REVERSE CHARACTERISTICS
20
10
TJ=125°C
1
TJ=75°C
0.1
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD REVERSE VOLTAGE,
VOLTS
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
10
1
10
100
REVERSE VOLTAGE, VOLTS

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