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BAS28 Datasheet PDF : 12 Pages
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NXP Semiconductors
BAS28
High-speed double diode
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak
-
reverse voltage
VR
reverse voltage
-
IF
forward current
[1] -
IFRM
repetitive peak
-
forward current
IFSM
non-repetitive peak
forward current
Per device
square wave
[3]
tp = 1 μs
-
tp = 1 ms
-
tp = 1 s
-
Ptot
total power dissipation
Tamb = 25 °C
[1][2] -
Tj
junction temperature
-
Tstg
storage temperature
−65
[1] Device mounted on an FR4 PCB.
[2] One diode loaded.
[3] Tj = 25 °C prior to surge.
6. Thermal characteristics
Max Unit
85
V
75
V
215
mA
500
mA
4
A
1
A
0.5
A
250
mW
150
°C
+150 °C
Table 6. Thermal characteristics
Symbol Parameter
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-t)
thermal resistance from
junction to tie-point
[1] Device mounted on an FR4 PCB.
Conditions
in free air
Min Typ Max Unit
[1] -
-
500 K/W
-
-
360 K/W
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
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