1N4448 데이터 시트보기 (PDF) - Master Instrument Corporation

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1N4448

FAST SWITCHING DIODES

Master Instrument Corporation 

1N4448

FAST SWITCHING DIODES

FEATURES

Silicon Epitaxial Planar Diode

Fast switching diode

This diode is also available in other

case styles including: the SOD-123

case with the type designation

1N4448W, the MiniMELF case with the

type designation LL4448, and the SOT23

case with the type designation

MECHANICAL DATA

Case: DO-35

Weight: apprax: 0.13gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified

Symbol

Value

Unit

Reverse Voltage

VR

75

V

Peak Reverse Voltage

Rectified Current (Average)

Half Wave Rectification with Resist. Load

at Tamb = 25 °C and f ≥ 50 Hz

VRM

100

V

I0

1501)

mA

Surge Forward Current at t < 1 s and Tj = 25 °C

Power Dissipation at Tamb = 25 °C

IFSM

Ptot

500

5001)

mA

mW

Junction Temperature

Tj

175

°C

Storage Temperature Range

TS

–65 to +175

°C

1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

MIC INVESTMENTS (CHINA) COMPANY LIMITED

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