15N40 데이터 시트보기 (PDF) - Unisonic Technologies
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15N40 Datasheet PDF : 6 Pages
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15N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
15
A
9
A
Pulsed (Note 2)
IDM
60
A
Avalanche Current (Note 2)
IAR
15
A
Single Pulsed (Note 3)
Avalanche Energy
EAS
Repetitive (Note 2)
EAR
731
mJ
17
mJ
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (TC=25°C)
Derate above 25°C
dv/dt
PD
15
V/ns
170
W
1.45
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=6.5mH, IAS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
0.7
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-633.b
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