R3612 데이터 시트보기 (PDF) - Power Innovations
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R3612 Datasheet PDF : 16 Pages
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R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
Non-repetitive peak off-state voltage, IG = 0, 0°C ≤ TJ ≤ 70°C
Repetitive peak off-state voltage, IG = 0, 0°C ≤ TJ ≤ 70°C
Repetitive peak gate-cathode voltage, VKA = 0, 0°C ≤ TJ ≤ 70°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs (Bellcore TR-NWT-001089, Section 4 and Appendix A)
0.2/310 µs (RLM88, open-circuit voltage wave shape 1.5 kV 0.5/700 µs)
5/310 µs (CCITT K17, K20 & K21, open-circuit voltage wave shape 1.5 kV 10/700 µs))
2/10 µs (Bellcore TR-NWT-001089, Section 4 and Appendix A)
Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)
200 ms
1s
25 s
900 s
Non-repetitive peak gate current, 1/2 µs,(see Notes 1 and 2)
Junction temperature
Storage temperature range
SYMBOL
VDSM
VDRM
VGKRM
ITSP
ITSM
IGSM
TJ
Tstg
VALUE
-90
-80
-80
UNIT
V
V
V
30
38
A
38
80
5.6
3.5
A
0.7
0.42
25
A
-55 to +150
°C
-55 to +150
°C
NOTES: 1. Initially the protector must be in thermal equilibrium with 0°C ≤ TJ ≤ 70°C. The surge may be repeated after the device returns to its
initial conditions.
2. Above 70°C, derate linearly to zero at 150°C lead temperature.
recommended operating conditions
CG Gate decoupling capacitor
MIN TYP MAX UNIT
220
nF
electrical characteristics, Tamb = 25°C (unless otherwise noted)
ID
V(BO)
t(BR)
VF
VFRM
tFRM
IH
IGAS
IGAT
PARAMETER
Off-state current
Breakover voltage
Breakdown time
Forward voltage
Peak forward recovery
voltage
Forward recovery time
Holding current
Gate reverse current
Gate reverse current,
on state
TEST CONDITIONS
VD = VDRM, VGK = 0
TJ = 0°C
TJ = 70°C
IT = 20 A, I3124 generator, open-circuit voltage wave shape 1 5 kV
0.5/700 µs, board resistance RS = 35 Ω, CG = 220 nF, VGG = -56 V
(See Note 3 and Figure 1.)
IT = 20 A, I3124 generator, open-circuit voltage
wave shape 1 5 kV 0.5/700 µs, board resist-
ance RS = 35 Ω, CG = 220 nF, VGG = -56 V
(See Note 3 and Figure 1.)
V(BR) < -70 V
V(BR) < -58.5 V
IF = 5 A, tw = 500 µs
IF = 20 A,I3124 generator, open-circuit voltage wave shape 1 5 kV
0.5/700 µs, board resistance RS = 35 Ω, CG = 220 nF, VGG = -56 V
(See Note 4 and Figure 1.)
IT = 20 A, I3124 generator, open-circuit voltage
wave shape 1 5 kV 0.5/700 µs, board resist-
ance RS = 35 Ω, CG = 220 nF, VGG = -56 V
(See Note 4 and Figure 1.)
VF > 10 V
VF > 5 V
VF > 1 V
IT = 1 A, di/dt = -1A/ms, VGG = -70 V, 0°C ≤ TJ ≤ 70°C
VGG = -70 V, VAK = 0
TJ = 0°C
TJ = 70°C
IT = 0.5 A, tw = 500 µs, VGG = -70 V
MIN TYP MAX UNIT
5
µA
50
µA
-80
V
1
µs
10000
3
V
15
V
0.25
1
µs
10000
105
mA
-5
µA
-50
-1
mA
PRODUCT INFORMATION
2
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