FSGM0465RB 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FSGM0465RB Datasheet PDF : 18 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability. The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VSTR
VDS
VCC
VFB
IDM
IDS
EAS
PD
TJ
VSTR Pin Voltage
Drain Pin Voltage
VCC Pin Voltage
Feedback Pin Voltage
Drain Current Pulsed
Continuous Switching Drain Current(6)
Single Pulsed Avalanche Energy(7)
Total Power Dissipation (TC=+25°C)(8)
Maximum Junction Temperature
Operating Junction Temperature(9)
TC=+25°C
TC=+100°C
-0.3
-40
650
V
650
V
26
V
12.0
V
10
A
5.0
A
3.2
A
250
mJ
45
W
+150
°C
+125
°C
TSTG
VISO
Storage Temperature
Minimum Isolation Voltage(10)
-55
+150
°C
2.5
V
ESD
Electrostatic
Human Body Model, JESD22-A114
Discharge Capability Charged Device Model, JESD22-C101
2
2
kV
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.75)
and junction temperature (see Figure 4).
7. L=75mH, starting TJ=25°C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
10. The voltage between the package back side and the lead is guaranteed.
Figure 4. Repetitive Peak Switching Current
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
Parameter
θJA
Junction-to-Ambient Thermal Impedance(11)
θJC
Junction-to-Case Thermal Impedance(12)
Notes:
11. Infinite cooling condition (refer to the SEMI G30-88).
12. Free standing with no heat-sink under natural convection.
© 2009 Fairchild Semiconductor Corporation
FSGM0465RB • Rev. 1.0.2
4
Value
62.5
3
Unit
°C/W
°C/W
www.fairchildsemi.com
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