STS8C5H30L(2004) 데이터 시트보기 (PDF) - STMicroelectronics
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STS8C5H30L
(Rev.:2004)
(Rev.:2004)
STMicroelectronics
STS8C5H30L Datasheet PDF : 11 Pages
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STS8C5H30L
ELECTRICAL CHARACTERISTICS(CONTINUED)
Table 7: Switching On
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 4 A,
RG= 4.7 Ω, VGS = 4.5 V
n-ch
p-ch
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
P-CHANNEL
VDD = 15 V, ID = 2 A,
RG= 4.7 Ω, VGS = 4.5 V
(Resistive Load see, Figure 28)
VDD= 24 V, ID= 8 A,
VGS= 5 V
P-CHANNEL
VDD = 24 V, ID = 4 A,
VGS = 5 V
(see, Figure 31)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
Min.
Typ.
12
25
Max. Unit
ns
ns
14.5
ns
35
ns
7
10 nC
12.5 16 nC
2.5
nC
5
nC
2.3
nC
3
nC
Table 8: Switching Off
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V, ID = 4 A,
RG= 4.7 Ω, VGS = 4.5 V
P-CHANNEL
VDD = 15 V, ID = 2.5 A,
RG= 4.7 Ω, VGS = 4.5 V
(Resistive Load see, Figure 28)
n-ch
p-ch
n-ch
p-ch
Min.
Typ.
23
125
Max. Unit
ns
ns
8
ns
35
ns
Table 9: Source-Drain Diodef
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD Source-drain Current
n-ch
p-ch
8
A
5
A
ISDM (2) Source-drain Current (pulsed)
n-ch
p-ch
32 A
20 A
VSD (1) Forward On Voltage
ISD = 8 A, VGS = 0
ISD = 5 A, VGS = 0
n-ch
p-ch
1.5 V
1.2 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ISD = 8 A, di/dt = 100 A/µs
VDD = 15V, Tj = 150°C
P-CHANNEL
ISD = 5 A, di/dt = 100 A/µs
VDD = 15V, Tj = 150°C
(see test circuit, Figure 29)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
15
ns
45
ns
5.7
nC
36
nC
0.76
A
1.6
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
3/11
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