STS8C5H30L(2004) 데이터 시트보기 (PDF) - STMicroelectronics

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STS8C5H30L
(Rev.:2004)

N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET™ III MOSFET

STMicroelectronics 

STS8C5H30L

N-CHANNEL 30V - 0.018Ω - 8A SO-8

P-CHANNEL 30V - 0.045Ω - 5A SO-8

LOW GATE CHARGE StripFET™ III MOSFET

Table 1: General Features

TYPE

VDSS RDS(on)

ID

STS8C5H30L (N-Channel) 30 V < 0.022 Ω 8 A

STS8C5H30L (P-Channel) 30 V < 0.055 Ω 5 A

s TYPICAL RDS(on) (N-Channel) = 0.018 Ω

s TYPICAL RDS(on) (P-Channel) = 0.045 Ω

s CONDUCTION LOSSES REDUCED

s SWITCHING LOSSES REDUCED

s LOW THRESHOLD DRIVE

s STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This MOSFET is the latest development of STMi-

croelectronics unique ”Single Feature Size™”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

Figure 1: Package

SO-8

Figure 2: Internal Schematic Diagram

APPLICATIONS

s DC/DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s POWER MANAGEMENT IN CELLULAR

PHONES

s DC MOTOR DRIVE

Table 2: Order Codes

PART NUMBER

STS8C5H30L

MARKING

S8C5H30L

PACKAGE

SO-8

September 2004

PACKAGING

TAPE & REEL

Rev. 2

1/11

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