IRLR7807ZPBF 데이터 시트보기 (PDF) - International Rectifier

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IRLR7807ZPBF

HEXFET® Power MOSFET

International Rectifier 

IRLR/U7807ZPbF

50

2.5

LIMITED BY PACKAGE

40

2.0

30

20

1.5

10

ID = 250µA

0

25

50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci= i/Ri

R2R2

τ2 τ2

0.001

1E-006

1E-005

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

R3R3 Ri (°C/W) τi (sec)

τCτ 1.796 0.000267

τ3 τ3

1.112 0.000607

0.842 0.004249

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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