EL817 데이터 시트보기 (PDF) - EVERLIGHT
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EL817 Datasheet PDF : 14 Pages
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4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G Series
Electrical Characteristics (Ta=25°C unless specified otherwise)
Input
Parameter
Forward voltage
Reverse current
Input capacitance
Symbol Min.
VF
-
IR
-
Cin
-
Typ.*
1.2
-
30
Max.
1.4
10
250
Unit
Condition
V IF = 20mA
µA VR = 4V
pF V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol Min.
ICEO
-
BVCEO
80
BVECO
7
Typ.*
-
-
-
Max.
100
-
-
Unit
Condition
nA VCE = 20V, IF = 0mA
V
IC = 0.1mA
V IE = 0.1mA
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol Min.
Typ.*
Max.
Unit
Condition
EL817
50
-
600
EL817A
80
-
160
EL817B
130
-
Current Transfer
ratio
EL817C
CTR
200
-
EL817D
300
-
260
400
% IF = 5mA ,VCE = 5V
600
EL817X
100
-
200
EL817Y
150
-
Collector-Emitter
saturation voltage
VCE(sat)
-
0.1
Isolation resistance
RIO
5× 1010
-
Floating capacitance
CIO
-
0.6
Cut-off frequency
fc
-
80
Rise time
Fall time
tr
-
6
tf
-
8
300
0.2
V
IF = 20mA ,IC = 1mA
-
VIO = 500Vdc,
40~60% R.H.
1.0
pF VIO = 0, f = 1MHz
-
VCE = 5V, IC = 2mA
kHz
RL = 100, -3dB
18
µs VCE = 2V, IC = 2mA,
18
µs RL = 100
* Typical values at Ta = 25°C
Everlight Electronics Co., Ltd.
Document No：DPC-0000011 Rev.4
Revision : 4
LifecyclePhase:
3
http://www.everlight.com
July 30, 2010
Release Date:2011-02-18 08:59:58.0
Expired Period: Forever
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