DF2S5.6FS(TL3,T) 데이터 시트보기 (PDF) - Toshiba

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DF2S5.6FS(TL3,T)

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

Toshiba 

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

±30kV

Criterion: No damage to device elements

Marking

DF2S5.6FS

Equivalent Circuit (Top View)

.6

IZ - VZ

100

Ta=25°C

10

1

00.1

0.01

0 1 2 3 4 5 6 7 8 9 10

ZENER VOLTAGE VZ (V)

CT - VR

100

f=1MHz

Ta=25°C

10

1

0

1

2

3

4

5

6

REVERSE VOLTAGE VR(V)

2

2007-11-01

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