BYG10D-M3/TR3 데이터 시트보기 (PDF) - Vishay Semiconductors
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BYG10D-M3/TR3 Datasheet PDF : 5 Pages
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BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
SMA (DO-214AC)
Cathode
Anode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
1.5 A
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
IFSM
30 A
IR
1.0 μA
VF
1.15 V
ER
20 mJ
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated pellet chip junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG10D BYG10G
Device marking code
BYG10D BYG10G
Maximum repetitive peak reverse voltage
VRRM
200
400
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IF(AV)
IFSM
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)
I(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y)
Operating junction and storage temperature range
ER
TJ, TSTG
BYG10J BYG10K
BYG10J BYG10K
600
800
1.5
30
20
-55 to +150
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
UNIT
V
A
A
mJ
°C
Revision:21-Feb-2020
1
Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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