BC558CTA 데이터 시트보기 (PDF) - Fairchild Semiconductor

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BC558CTA

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

ICBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

fT

Cob

NF

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Collector-Base Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

VCB = -30 V, IE = 0

VCE = -5 V, IC = -2 mA

IC = -10 mA, IB = -0.5 mA

IC = -100 mA, IB = -5 mA

IC = -10 mA, IB = -0.5 mA

IC = -100 mA, IB = -5 mA

VCE = -5 V, IC = -2 mA

VCE = -5 V, IC = -10 mA

VCE = -5 V, IC = -10 mA,

f = 10 MHz

Output Capacitance

VCB = -10 V, IE = 0, f = 1 MHz

Noise

BC556 / BC557 / BC558 VCE = -5 V, IC = -200 μA,

BC559 / BC560

f = 1 kHz, RG = 2 kΩ

Figure BC559

BC560

VCE = -5 V, IC = -200 μA,

RG = 2 kΩ, f = 30 to 15000 MHz

110

-600

Typ.

-90

-250

-700

-900

-660

150

2

1

1.2

1.2

Max.

-15

800

-300

-650

-750

-800

6

10

4

4.0

2.0

Unit

nA

mV

mV

mV

MHz

pF

dB

hFE Classification

Classification

hFE

A

110 ~ 220

B

200 ~ 450

C

420 ~ 800

© 2002 Fairchild Semiconductor Corporation

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

3

www.fairchildsemi.com

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