IMB3A 데이터 시트보기 (PDF) - ROHM Semiconductor

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IMB3A

General purpose (dual digital transistor)

ROHM Semiconductor 

EMB3 / UMB3N / IMB3A

lAbsolute maximum ratings (Ta = 25°C)

<For DTr1 and DTr2 in common>

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

EMB3

Power dissipation

UMB3N

IMB3A

Junction temperature

Range of storage temperature

Datasheet

Symbol

VCBO

VCEO

VEBO

IC

PD*1*2

PD*1*2

PD*1*3

Tj

Tstg

Values

-50

-50

-5

-100

150

150

300

150

-55 to +150

Unit

V

V

V

mA

mW/Total

℃

℃

lElectrical characteristics (Ta = 25°C)

<For DTr1 and DTr2 in common>

Parameter

Symbol

Conditions

Collector-base breakdown

voltage

BVCBO IC = -50μA

Collector-emitter breakdown

voltage

BVCEO IC = -1mA

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Input resistance

BVEBO

ICBO

IEBO

VCE(sat)

hFE

R1

IE = -50μA

VCB = -50V

VEB = -4V

IC = -5mA, IB = -0.25mA

VCE = -5V, IC = -1mA

-

Transition frequency

f

*4

T

VCE = -10V, IE = 5mA,

f = 100MHz

*1 Each terminal mounted on a reference land.

*2 120mW per element must not be exceeded.

*3 200mW per element must not be exceeded.

*4 Characteristics of built-in transistor.

Values

Unit

Min. Typ. Max.

-50 -

-

V

-50 -

-

V

-5

-

-

V

-

- -500 nA

-

- -500 nA

-

- -300 mV

100 250 600 -

3.29 4.7 6.11 kΩ

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20151019 - Rev.002

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