FMA9A 데이터 시트보기 (PDF) - ROHM Semiconductor
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FMA9A Datasheet PDF : 2 Pages
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Transistors
UMA9N / FMA9A
Digital transistor
(Common Emitter Dual Transistors)
UMA9N / FMA9N
!Features
1) Two DTA114E chips in UMT and
SMT packages.
2) Mounting cost and area can be cut
in half.
!Structure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
The following characteristics apply to
both DTr1 and DTr2.
!External dimensions (Units : mm)
UMA9N
2.0±0.2
1.3±0.1
0.65 0.65
(2)
(3)
(1)
0.9±0.1
0.7
0~0.1
(4)
(5)
0.2
+0.1
−0.05
0.15±0.05
All terminals have same
dimensions.
ROHM : UMT5
EIAJ : SC-88A
FMA9A
2.9±0.2
1.9±0.2
0.95 0.95
(3) (4) (5)
1.1
+0.2
−0.1
0.8±0.1
0~0.1
(2)
(1)
0.3
+0.1
−0.05
All terminals have same
dimensions.
ROHM : SMT5
EIAJ : SC-74A
0.15
+0.1
−0.06
(3)
R1 R2
DTr2
(2)
R2
(1)
R1
DTr1
(3)
R1
R2
DTr2
(4)
R2
(5)
R1
DTr1
(4)
(5) R1 = 10kΩ
(2)
(1) R1 = 10kΩ
R2 = 10kΩ
R2 = 10kΩ
Abbreviated symbol: A10
!Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Symbol
VCC
Input voltage
VIN
Output current
IO
IC (MAX.)
Power
dissipation
UMA9N
FMA9A
Pd
Junction temperature
Tj
Storage temperature
Tstg
*1 120mW per element must not be exceeded.
*2 200mW per element must not be exceeded.
Limits
−50
−40
10
−50
−100
150 (TOTAL)
300 (TOTAL)
150
−50~+150
Unit
V
V
mA
*1
mW
*2
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Input voltage
VI (off)
VI (on)
Output voltage
VO (on)
Input current
II
Output current
IO (off)
DC current gain
GI
Transition frequency
fT
Input resistance
R1
Resistance ratio
R2/R1
* Transition frequency of the device
Min.
−
−3.0
−
−
−
30
−
7
0.8
Typ.
−
−
−0.1
−
−
−
250
10
1
Max.
−0.5
−
−0.3
−0.88
−0.5
−
−
13
1.2
Unit
V
V
mA
µA
−
MHz
kΩ
−
Conditions
VCC = −5V, IO = −100µA
VO = −0.3V, IO = −10mA
IO/II = −10mA / −0.5mA
VI = −5V
VCC = −50V, VI = 0V
IO = −5mA, VO = −5V
VCE = −10mA, IE = 5mA, f = 100MHZ *
−
−
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