IMH2AT110(Old_V) 데이터 시트보기 (PDF) - ROHM Semiconductor
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IMH2AT110 Datasheet PDF : 3 Pages
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Transistors
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Supply voltage
VCC
50
Input voltage
VIN
40
−10
Output current
IO
IC(Max.)
Power
dissipation
EMH2,UMH2N
IMH2A
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
30
100
150 (TOTAL)
300 (TOTAL)
150
−55~+150
Unit
V
V
mA
∗1
mW
∗2
°C
°C
EMH2 / UMH2N / IMH2A
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
−
VI(on)
3
−
0.5
VCC=5V, IO=100µA
V
−
−
VO=0.3V, IO=2mA
Output voltage
VO(on)
−
0.1 0.3
V IO/II=10mA/0.5mA
Input current
II
−
− 0.18 mA VI=5V
Output current
IO(off)
−
−
0.5 µA VCC=50V, VI=0V
DC current gain
GI
68
−
−
− VO=5V, IO=5mA
Transition frequency
fT
−
250
−
MHZ VCE=10mA, IE=−5mA, f=100MHz
∗
Input resistance
R1
32.9 47 61.1 kΩ
−
Resistance ratio
R2/R1 0.8
1
1.2
−
−
∗ Transition frequency of the device
!Electrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta=−40°C
25°C
100°C
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
VCC=5V
5m
2m Ta=100°C
25°C
1m
−40°C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100°C
200
25°C
−40°C
100
50
VO=5V
20
10
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
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