MC74VHC86DR2G(2011) 데이터 시트보기 (PDF) - ON Semiconductor
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MC74VHC86DR2G Datasheet PDF : 7 Pages
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MC74VHC86
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
VCC
TA = 25°C
TA = −55°C to +125°C
Test Conditions
V
Min
Typ
Max
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIH
High−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
2.0
3.0 to
5.5
1.50
VCC x 0.7
1.50
V
VCC x 0.7
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIL
Low−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
2.0
3.0 to
5.5
0.50
VCC x 0.3
0.50
V
VCC x 0.3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOH High−LevelOutput
Vin = VIH or VIL
2.0
1.9
2.0
1.9
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage
IOH = −50 mA
3.0
2.9
3.0
2.9
4.5
4.4
4.5
4.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VIH or VIL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOH=−4mA 3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOH=−8mA 4.5
2.58
3.94
2.48
3.80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOL Low−LevelOutput
Vin = VIH or VIL
2.0
Voltage
IOL = 50 mA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 4.5
0
0.1
0
0.1
0
0.1
0.1
V
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VIH or VIL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOL=4mA 3.0
IOL = 8 mA 4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
Input Leakage Current Vin = 5.5 V or GND
0 to 5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC
Quiescent Supply
Vin = VCC or GND
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current
0.36
0.44
0.36
0.44
±0.1
±1.0
mA
2.0
20.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
tPHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin
Parameter
Test Conditions
Propagation Delay, A or B to Y VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
Input Capacitance
TA = 25°C
Min
Typ
Max
7.0
11.0
9.5
14.5
4.8
6.8
6.3
8.8
4
10
TA = −55°C to
+125°C
Min
Max Unit
1.0
13.0 ns
1.0
16.5
1.0
8.0
1.0
10.0
10
pF
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 1.)
18
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0 V, Measured in SOIC Package)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.3
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
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