2SD2150(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SD2150
(Rev.:RevA)

Low Frequency Transistor (20V, 3A)

ROHM Semiconductor 

Transistors

2SD2150

5000

2000

1000

500

Ta=100°C

25°C

−40°C

VCE=2V

200

100

50

20

10

5

1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2

5 10

COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs.

collector current

2

IC/IB=10

1

0.5

0.2

0.1

50m

Ta=100°C

25°C

−40°C

20m

10m

5m

2m

1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

Fig.5 Collector-emitter

saturation voltage vs.

collector current ( )

1

lC/lB=20

0.5

0.2

0.1

0.05

Ta=100°C

25°C

−40°C

0.02

0.01

5m

2m

1m

1m 2m 5m0.010.02 0.050.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-emitter

saturation voltage vs.

collector curren ( )

2

IC/IB=20

1

0.5

0.2

Ta=100°C

0.1

25°C

50m

−40°C

20m

10m

5m

2m

1m 2m 5m10m20m50m0.1 0.2 0.5 1 2

5 10

COLLECTOR CURRENT : IC (A)

Fig.7 Collector-emitter

saturation voltage vs.

collector current ( )

1000

500

Ta=25°C

VCE=2V

200

100

50

20

10

5

2

1

−1 −2 −5 −10 −20 −50−100 −200−500−1000

EMITTER CURRENT : IE (mA)

Fig.8 Gain bandwidth product vs.

emitter current

1000

500

200

100

50

Ta=25°C

f=1MHz

IE=0A

IC=0A

Cob

Cob

20

10

0.1 0.2 0.5 1 2

5 10 20 50

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE : VEB (V)

Fig.9 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Rev.A

3/3

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