2N4416 데이터 시트보기 (PDF) - Central Semiconductor
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2N4416 Datasheet PDF : 4 Pages
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2N4416
2N4416A
SILICON
N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A
are silicon N-Channel Junction Field Effect Transistors
designed for VHF amplifier and mixer applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C)
Gate-Drain Voltage
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VGD
VGS
VDS
IG
PD
TJ, Tstg
2N4416
30
2N4416A
35
30
35
30
35
10
300
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N4416
SYMBOL TEST CONDITIONS
MIN MAX
IGSS
VGS=20V, VDS=0
-
100
IGSS
VGS=20V, VDS=0, TA=150°C
-
100
IDSS
VDS=15V, VGS=0
5.0 15
BVGSS
IG=1.0μA
30
-
VGS(off)
VDS=15V, ID=1.0nA
-
6.0
gFS
VDS=15V, VGS=0, f=1.0kHz
4,500 7,500
gOS
VDS=15V, VGS=0, f=1.0kHz
-
50
Crss
VDS=15V, VGS=0, f=1.0MHz
-
1.0
Ciss
VDS=15V, VGS=0, f=1.0MHz
-
4.0
Coss
VDS=15V, VGS=0, f=1.0MHz
-
2.0
2N4416A
MIN MAX
-
100
-
100
5.0 15
35
-
2.5 6.0
4,500 7,500
-
50
-
1.0
-
4.0
-
2.0
UNITS
V
V
V
mA
mW
°C
UNITS
pA
nA
mA
V
V
μS
μS
pF
pF
pF
HIGH FREQUENCY CHARACTERISTICS:
SYMBOL TEST CONDITIONS
giss
biss
goss
boss
gfs
Gps
NF
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, ID=5.0mA
VDS=15V, ID=5.0mA, RG=1.0kΩ
100MHz
MIN MAX
-
100
- 2,500
-
75
- 1,000
-
-
18
-
-
2.0
400MHz
MIN MAX
- 1,000
- 10,000
-
100
- 4,000
4,000 -
10
-
-
4.0
UNITS
μS
μS
μS
μS
μS
dB
dB
R2 (4-June 2013)
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