IPD122N10N3G(2009) 데이터 시트보기 (PDF) - Infineon Technologies
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IPD122N10N3G Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
IPD122N10N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=46 A pulsed
parameter: V DD
10
8
80 V
50 V
25 °C
6
100 °C
20 V
10
150 °C
4
2
1
0.1
0
1
10
100
1000
0
t AV [µs]
10
20
30
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
110
V GS
Qg
105
100
V g s(th)
95
Q g(th)
90
-60 -20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.2
page 7
Q sw
Q gd
Q gate
2009-07-09
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