IKA15N60T 데이터 시트보기 (PDF) - Unspecified
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IKA15N60T Datasheet PDF : 13 Pages
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TrenchStop® Series
IKA15N60T
q
D=0.5
100K/W
10-1K/W
0.2
0.1
0.05
0.02
0.01
R,(K/W)
1.634
1.541
0.423
0.223
0.236
0.122
R1
τ, (s)
4.13
1.00
3.83*10-2
3.26*10-3
4.82*10-4
6.64*10-5
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms 1s 10s
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
D=0.5
100K/W
10-1K/W
0.2
0.1
R,(K/W) τ, (s)
1.7757
1.11*10-1 6
0.05 1.4115
2.552*10-2
0.5014
3.914*10-3
0.02
0.3862
4.92*10-4
0.445
7.19*10-5
0.01
0.3188
7.4*10-6
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-2K/W
10µs 100µs 1ms 10ms 100ms 1s 10s
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
200ns
160ns
TJ=175°C
120ns
80ns
40ns
TJ=25°C
0ns
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=15A,
Dynamic test circuit in Figure E)
1.0µC
0.8µC
TJ=175°C
0.6µC
0.4µC
TJ=25°C
0.2µC
0.0µC
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 15A,
Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.1 July 06
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