IGB15N60T 데이터 시트보기 (PDF) - Unspecified

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IGB15N60T

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Unspecified 

IGB15N60T

TRENCHSTOP™ Series

q

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25C,

VCC=400V,IC=15A,

VGE=0/15V,rG=15,

L=154nH,C=39pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Diode from IKW30N60T

min.

-

-

-

-

-

-

-

Value

Typ.

17

11

188

50

0.22

0.35

0.57

Unit

max.

- ns

-

-

-

- mJ

-

-

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175C,

VCC=400V,IC=15A,

VGE=0/15V,rG=15,

L=154nH,C=39pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Diode from IKW30N60T

min.

-

-

-

-

-

-

-

Value

Typ.

17

15

212

79

0.34

0.47

0.81

Unit

max.

- ns

-

-

-

- mJ

-

-

IFAG IPC TD VLS

3

Rev. 2.6 30.04.2015

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