A Product Line of
Diodes Incorporated
ZXTD6717E6
NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
ton
toff
Min Typ Max
15
15
7
<-1 10
<-1 10
<-1 10
200 420
300 450
250 390
200 300
75 150
30
75
16.5 20
40
55
75 100
150 200
205 245
0.93 1.10
0.865 1.10
15
180
50
250
Note: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
Unit
Test Condition
V IC = 100µA, IE = 0
V IC = 10mA, IB = 0
V IE = 100µA, IC = 0
nA VCB = 10V
nA VEB =5.6
nA VCE = 10V
IC = 10mA, VCE = 2V
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
mV IC = 100mA, IB = 10mA
mV IC = 250mA, IB = 10mA
mV IC = 500mA, IB = 10mA
mV IC = 1A, IB = 10mA
mV IC = 1.5A, IB = 20mA
V IC = 1.5A, IB = 20mA
V IC = 1.5A, VCE = 2V
pF
MHz
VCB = 10V, f = 1.0MHz
IC = 50mA, VCE = 10V
f = 100MHz
ns IC = 1A, VCC = 10V
ns IB1 = -IB2 = 100mA
ZXTD6717E6
Document Number: DS33653 Rev: 4 - 2
3 of 8
www.diodes.com
March 2015
© Diodes Incorporated