DTD143TK(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTD143TK
(Rev.:RevA)

Digital transistors (built-in resistor)

ROHM Semiconductor 

Transistors

DTD143TK

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage BVCBO 50

−

−

V IC=50µA

Collector-emitter breakdown voltage BVCEO 40 −

−

V IC=1mA

Emitter-base breakdown voltage

BVEBO 5

−

−

V IE=50µA

Collector cutoff current

ICBO

−

− 0.5 µA VCB=50V

Emitter cutoff current

IEBO

−

− 0.5 µA VEB=4V

Collector-emitter saturation voltage VCE(sat) −

− 0.3 V IC/IB=50mA/2.5mA

DC current transfer ratio

hFE 100 250 600 − VCE=5V, IC=50mA

Input resistance

R1 3.29 4.7 6.11 kΩ

−

Transition frequency

∗Transition frequency of the device

fT

− 200 − MHz VCE=10V, IE= −50mA, f=100MHz ∗

zPackaging specifications

Package

Packaging type

Code

Part No.

Basic ordering

unit (pieces)

DTD143TK

SMT3

Taping

T146

3000

zElectrical characteristic curves

1k

VCE=5V

500

200

100

Ta=100 C

25 C

50

−40 C

20

10

5

2

1

500 1m 2m 5m 10m 20m 50m100m 200m 500m

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain vs. collector current

1

500m

lC/lB=20

200m

100m

50m

Ta=100 C

25 C

−40 C

20m

10m

5m

2m

1m

500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage

vs. collector current

Rev.A

2/2

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