DTDG14 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTDG14

Digital NPN transistor (with resistor and zener diode)

ROHM Semiconductor 

Transistors

DTDG14GP

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO 50

−

70

V IC=50µA

Collector-emitter breakdown voltage

BVCEO 50

−

70

V IC=1mA

Emitter-base breakdown voltage

BVEBO

5

−

−

V IE=720µA

Collector cutoff current

ICBO

−

−

0.5 µA VCB=40V

Emitter cutoff current

IEBO

300

−

580 µA VEB=4V

Collector-emitter saturation voltage

VCE(sat) −

−

0.4

V IC/IB=500mA/5mA

DC current transfer ratio

hFE

300

−

−

− VCE=2V, IC=500mA

Emitter-base resistance

R

7

10 13 kΩ

−

Transition frequency

fT

−

80

− MHz VCE=5V, IE=−0.1A, f=30MHz

∗

∗Transition frequency of the device

!Packaging specifications

Package

Packaging type

Code

Part No.

Basic ordering

unit (pieces)

DTDG14GP

MPT3

Taping

T100

1000

!Electrical characteristic curves

10

5

2

1

500m

200m

100m

50m

ICP

DC

P

PW=100mW=s1∗0ms∗

20m

10m

5m 14W×18l×0.8t(Units : mm)

When mounted on glass epoxy

2m ∗Single pulse

1m

100m 200m 500m 1 2

5 10 20

50 100

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Safe operating area

10k

Ta=25°C

5k

2k

1k

500

200

VCE=5V

2V

100

1V

50

20

10

10m 20m 50m 100m200m500m 1 2

5 10

COLLECTOR CURRENT : IC (A)

Fig.2 DC current gain vs. collector

current

10

Ta=25°C

5

2

1

500m

200m

100m

50m

IC/IB=200

100

50

20m

10m

10m 20m 50m 100m 200m 500m 1 2

5 10

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation

voltage vs. collector current

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