VUB72-12/16NOXT 데이터 시트보기 (PDF) - IXYS CORPORATION
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VUB72-12/16NOXT Datasheet PDF : 7 Pages
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70
VGE = 15 V
60
50
IC
40
[A] 30
TVJ = 25°C
TVJ = 125°C
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE [V]
Fig. 6 IGBT, typ. output characteristics
VUB 72-12/16NOXT
70
VGE = 15 V
60
17 V
19 V
50
13 V
11 V
IC 40
TVJ = 125°C
[A] 30
9V
20
10
0
0
1
2
3
4
5
VCE [V]
Fig. 7 IGBT, typ. output characteristics
10
8
6
E
[mJ] 4
RG = 27 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
2
0
0
20
40
60
80
ICE [A]
Fig. 8 IGBT, typ. switching energy
versus collector current
6
IC = 35 A
VCE = 600 V
Eon
5
VGE = ±15 V
TVJ = 125°C
E
[mJ]
Eoff
4
3
20
30
40
50
60
70
80
RG [Ω]
Fig. 9 IGBT, typ. switching energy
versusgate resistance
101
10000
100
10-1
ZthJC
[K/W] 10-2
10-3
single pulse
chopper diode
rectifier diode
IGBT
1000
R
[Ω]
100
10-4
10-5
10-4
10-3
10-2
10-1
100
101
t [s]
Fig. 10 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
10
-20 0 20 40 60 80 100 120 140 160
T [°C]
Fig. 11 Typ. thermistor resistace vs. temperature
20101119a
6-6
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