VRF150MP 데이터 시트보기 (PDF) - Microsemi Corporation
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VRF150MP Datasheet PDF : 5 Pages
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Dynamic Characteristics
Symbol
Parameter
Test Conditions
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 50V
f = 1MHz
Functional Characteristics
Symbol
Parameter
GPS
GPS
ηD
IMD(d3)
IMD(d11)
ψ
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
f = 150MHz, VDD = 50V, IDQ = 250mA, Pout = 150W
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 1
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
30:1VSWR - All Phase Angles
Class A Characteristics
Symbol
GPS
Test Conditions
IMD(d3)
IMD(d9-d13)
VDD = 50V, IDQ = 3A, Pout = 150WPEP, f1 = 30MHz, f2 = 30.001MHz
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
VRF150(MP)
Min
Typ
Max
Unit
420
210
pF
35
Min
Typ
Max Unit
18
dB
11
50
%
-32
dBc
-60
No Degradation in Output Power
Min
Typ
Max
Unit
20
-50
dB
-75
Typical Performance Curves
35
30
14V
10V
25
9V
8V
20
15
7V
10
6V
5V
5
4V
0
0 4 8 12 16 20 24 28 32
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
100
Ciss
Coss
35
250μs PULSE
TEST<0.5 % DUTY
CYCLE
30
25
TJ= -55°C
20
TJ= 25°C
15
10
TJ= 125°C
5
00
20
2
4
6
8 10 12
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
10
IDMax
Pdmax
10
Crss
1
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
Rds(on)
1
DC line
TJ = 125°C
TC = 75°C
1
1
10
100 250
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
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