VNB49N04 데이터 시트보기 (PDF) - STMicroelectronics
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VNB49N04 Datasheet PDF : 14 Pages
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VNP49N04FI / VNB49N04 / VNV49N04
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr (**)
Qrr (**)
IRRM (**)
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD=25A; VIN=0V
ISD=25A; di/dt=100A/µs
VDS=30V; Tj=25°C
(see test circuit, figure 5)
PROTECTIONS
Symbol
Parameter
ILIM
Drain Current Limit
tdlim (**)
Tjsh (**)
Tjrs (**)
Igf (**)
Eas (**)
Step Response Current
Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Test Conditions
VIN=10V; VDS=13V
VIN=5V; VDS=13V
VIN=10V
VIN=5V
VIN=10V; VDS=13V
VIN=5V; VDS=13V
Starting Tj=25°C; VDS=20V
VIN=10V; Rgen=1KΩ; L=6mH
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(**) Parameters guaranteed by design/characterization
Min Typ Max Unit
1.8
V
250
ns
910
nC
7.5
A
Min Typ Max Unit
28
49
70
A
28
49
70
A
35
50
µs
90
150
µs
150
°C
135
°C
50
mA
20
mA
4
J
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