VDD18SCTA 데이터 시트보기 (PDF) - AnaSem Semiconductors

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VDD18SCTA

Low voltage, low power consumption, ± 1% high precision voltage detection Built-in delay circuit CMOS voltage detector

AnaSem Semiconductors 

Rev. C09-09

AnaSem

产品规格书

安纳森半导体

低电压, 低功耗, ±1% 高精度电压检测内置延迟电路 CMOS 电压检测器

VDD 系列

概述

VDD系列乃用于低电压范围的低功耗，高检测精度的内置延迟电路电压

检测器. VDD系列达成的检测精度是以集成电路内以温度系数调整的高准

确率参考电压值来作基准。本集成电路采用最新的CMOS生产技术和激

光微调技术，与精锐的生产监控。因为内置有延迟电路，延迟检测时间

不需配合外围元件便可以原厂设定之延迟时间范围来选择。

无卤素

RoHS

符合标准

特点

z 检测电压范围 ·····························································1··.·8··V~6.0V (selectable with a step of 0.1V)

z 工作电压范围 ·····························································0··.·7··V~6.0V

z 高精度电压检测 ····················································· ±1% (VDET=1.8V~6.0V)

z 电压检测温度特征 ·····················································T··y··p··.··±··2··0· ppm/°C (VDET=1.8V~6.0V)

z 延迟时间选择 ·····························································S··/·1··0··~··5··0··m···s··,··M···/·5··0··~200ms, L/80~400ms

z 输出类别 ····································································C··M···O···S····o··r··N··-··c·hannel open drain

z 低功耗 ·································································· Typ. 0.6µA (VIN=1.5V)

z 工作温度范围 ·····························································–··4··0·°C ~ +85°C

z 小型封装 ····································································S··O···T··-·2··3···(·4··0··0··m· W), SON-4 (400mW)

应用范围

z 微型处理器的从设程序

z 各类系统的开动从设

z 电池充电检测

z 各类系统备用电源，电池开关控制

z 电池寿命检测

z 延迟电路设计

AnaSem Inc.

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