VDD18SCTA 데이터 시트보기 (PDF) - AnaSem Semiconductors

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VDD18SCTA

Low voltage, low power consumption, ± 1% high precision voltage detection Built-in delay circuit CMOS voltage detector

AnaSem Semiconductors 

Rev. C09-09

低电压, 低功耗, ±1% 高精度电压检测内置延迟电路 CMOS 电压检测器

VDD 系列

一般特征 – N-沟道驱动输出电流 vs. VDS (续)

z VDD181SCTA (CMOS 1.8V)

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

0

Ta=25°C

VIN=1.5V

VIN=1.0V

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VDS (V)

z VDD251SCTA (CMOS 2.5V)

18.0

16.0

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0

0

Ta=25°C

VIN=2.0V

VIN=1.5V

VIN=1.0V

0.5

1.0

1.5

2.0

2.5

VDS (V)

z VDD351SCTA (CMOS 3.5V)

40.0

35.0

30.0

25.0

20.0

15.0

10.0

5.0

0

0

Ta=25°C

VIN=3.0V

VIN=2.5V

VIN=2.0V

VIN=1.5V

VIN=1.0V

0.5

1.0

1.5

2.0

2.5

3.0

VDS (V)

z VDD451MCTA (CMOS 4.5V)

60.0

50.0

40.0

30.0

20.0

10.0

0

0

Ta=25°C

VIN=4.0V

VIN=3.5V

VIN=3.0V

VIN=2.5V

VIN=2.0V

VIN=1.5V

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS (V)

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