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UT62L25616I

256K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.5

UTRON

UT62L25616(I)

256K X 16 BIT LOW POWER CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

Terminal Voltage with Respect to VSS

Operating Temperature

Industrial

Storage Temperature

VTERM

TA

TSTG

-0.5 to 4.6

V

-40 to 85

℃

-65 to 150

℃

Power Dissipation

PD

1

W

DC Output Current

Soldering Temperature (under 10 secs)

IOUT

Tsolder

50

mA

260

℃

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

DC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V, TA = -40℃ to 85℃(I))

PARAMETER

SYMBOL TEST CONDITION

Power Voltage

Input High Voltage

Input Low Voltage

Input Leakage Current

VCC

VIH*1

VIL*2

ILI

VSS ≦VIN ≦VCC

Output Leakage Current ILO

VSS ≦VI/O ≦VCC; Output Disable

Output High Voltage

VOH IOH= -1mA

Output Low Voltage

VOL IOL= 2.1mA

Operating Power

Supply Current

Cycle time=min, 100%duty

ICC

II/O=0mA, CE =VIL

Average Operation

Current

ICC1 100%duty,II/O=0mA, CE ≦0.2V,

other pins at 0.2V or Vcc-0.2V

ICC2

Standby Current (TTL)

ISB

CE =VIH, other pins =VIL or VIH

Standby Current (CMOS) ISB1

CE =VCC-0.2V

other pins at 0.2V or Vcc-0.2V

Notes:

1. Overshoot : Vcc+2.0v for pulse width less than 10ns.

2. Undershoot : Vss-2.0v for pulse width less than 10ns.

3. Overshoot and Undershoot are sampled, not 100% tested.

55

70

100

Tcycle=

1µs

Tcycle=

500ns

-L

-LL

MIN. TYP.

2.7 3.0

2.2 -

-0.2 -

-1 -

-1 -

2.2 2.7

--

- 30

- 20

- 16

-4

-8

- 0.3

- 20

-2

MAX.

3.6

VCC+0.3

0.6

1

1

-

0.4

40

30

25

5

10

0.5

80

20

UNIT

V

V

V

µA

µA

V

V

mA

mA

mA

mA

mA

mA

µA

µA

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

4

P80054

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