NTE2332 데이터 시트보기 (PDF) - NTE Electronics

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NTE2332

Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

DC Current Gain

Gain Bandwidth Product

Collector–Emitter Saturation

Voltage

hFE

fT

VCE(sat)

VCE = 5V, IC = 1A

VCE = 5V, IC = 1A

IC = 1A, IB = 4mA

1000 4000 –

– 180 – MHZ

– 1.0 1.5 V

Base–Emitter Saturation

Voltage

VBE(sat) IC = 1A, IB = 4mA

– – 2.0 V

Collector–Base Breakdown V(BR)CBO IC = 0.1mA, IE = 0

Voltage

50 60 70 V

Collector–Emitter Breakdown V(BR)CEO IC = 1mA, RBE = ∞

Voltage

50 60 70 V

Unclamped Inductive Load

Energy

Es/b L = 100mH, RBE = 100Ω

25 –

– mJ

Turn–On Time

Storage Time

Fall Time

ton

VCC = 20V, IC = 1A

tstg

IB1 = –IB2 = 4mA

tf

IB1 = –IB2 = 4mA

– 0.2 – µs

– 3.5 – µs

– 0.5 – µs

.420 (10.67)

Max

.110 (2.79)

C

B

.147 (3.75)

Dia Max

.500

(12.7)

Max

E

.070 (1.78) Max

.250

(6.35)

Max

.500

(12.7)

Min

Base

.100 (2.54)

Emitter

Collector/Tab

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