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UFB130FA40 데이터 시트보기 (PDF) - Vishay Semiconductors

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UFB130FA40
Vishay
Vishay Semiconductors Vishay
UFB130FA40 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
VS-UFB130FA40
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 130 A
SOT-227
PRIMARY CHARACTERISTICS
VR
IF(AV) per module at TC = 114 °C
trr
Type
400 V
130 A
40 ns
Modules - diode FRED Pt®
Package
SOT-227
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB130FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery current
shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
VR
IF
IFSM
PD
VISOL
TJ, TStg
TEST CONDITIONS
TC = 123 °C
TC = 25 °C
TC = 123 °C
Any terminal to case, t = 1 min
MAX.
400
65
800
144
2500
-55 to +175
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
VBR
IR = 100 μA
Forward voltage
VFM
IF = 60 A
IF = 60 A, TJ = 175 °C
Reverse leakage current
IRM
VR = VR rated
TJ = 175 °C, VR = VR rated
Junction capacitance
CT
VR = 400 V
400
-
-
1.16
-
0.93
-
-
-
-
-
67
MAX.
-
1.37
1.09
50
1
-
UNITS
V
μA
mA
pF
Revision: 18-Sep-2018
1
Document Number: 93602
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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