IR2125(Old_V) 데이터 시트보기 (PDF) - International Rectifier

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IR2125
(Rev.:Old_V)

CURRENT LIMITING SINGLE CHANNEL DRIVER

International Rectifier 

Previous Datasheet

Device Information

Process & Design Rule

Transistor Count

Die Size

Die Outline

Index

Next Data Sheet

IR2125

HVDCMOS 4.0 µm

410

104 X 111 X 26 (mil)

Thickness of Gate Oxide

Connections

Material

First

Width

Layer

Spacing

Thickness

Material

Second

Width

Layer

Spacing

Thickness

Contact Hole Dimension

Insulation Layer

Material

Thickness

Passivation

Material

(1)

Thickness

Passivation

Material

(2)

Thickness

Method of Saw

Method of Die Bond

Wire Bond

Method

Material

Leadframe

Material

Die Area

Lead Plating

Package

Types

Materials

Remarks: * Patent Pending

800Å

Poly Silicon

4 µm

6 µm

5000Å

Al - Si (Si: 1.0% ±0.1%)

6 µm

9 µm

20,000Å

8 µm X 8 µm

PSG (SiO2)

1.5 µm

PSG (SiO2)

1.5 µm

Proprietary*

Proprietary*

Full Cut

Ablebond 84 - 1

Thermo Sonic

Au (1.0 mil / 1.3 mil)

Cu

Ag

Pb : Sn (37 : 63)

8 Lead PDIP

EME6300 / MP150 / MP190

To Order

CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-111

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