U6813B 데이터 시트보기 (PDF) - Atmel Corporation
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U6813B Datasheet PDF : 16 Pages
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7. Electrical Characteristics (Continued)
VCC = 5V, Tamb = –40 to +125°C; reference pin is GND or SGND (over- and under-voltage detection);
fintern = 200 kHz +50%/–45%, fWDC = 5 kHz ±10%; fWDI = 50 Hz, bootstrap capacitor CBoot = 47 nF at pin CAPI
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit Type*
9 Relay Driver (RELO)
9.1 Saturation voltage
9.2 Current limitation
9.3
Internal clamping
voltage
I ≤ 150 mA
1
VSAT1
0.1
1
ILIM
150
1
VCL
26
0.5
V
A
300
mA
A
30
V
A
9.4 Turn-off energy
1
30
mJ
C
9.5 Leakage current
VBatt = 16V
VBatt = 26V at 25°C
1
ILEAK1
ILEAK1
20
µA
200
µA
A
10 Power-FET Output FETO (Maximum Load Capacitor at FET Gate 470 pF, Charge-pump Frequency 110 to 300 kHz)
10.1 Output voltage
VS = 9V to 15V
9
VOUT9
VS +
10V
VS +
15V
V
A
10.2 Operation range
10.3
Overvoltage shut-
down
7
VS
9
7
VS
20
20
V
A
24
V
A
10.4
Internal clamping
voltage
9
VCL
26
30
V
A
10.5 On/off frequency
9
f
200
Hz
A
10.6 Maximum current
11 Battery Supply
FETO
9
IFETO
10
µA
A
11.1
Internal clamping
voltage
7
VCL
26
30
V
A
11.2
Clamping current
capability(1)
7
IVS
5
mA
A
11.3 Leakage current
at FETI = low
12 Reset and VCC Control
12.1 Lower reset level
Reference SGND
12.2 Upper reset level
Reference SGND
12.3 Hysteresis
12.4 Reset debounce time
12.5 Reset delay
13 Reset and 3.3V Control
7
ILEAVS
100
µA
A
14
VCC
4.5
4.75
V
A
14
VCC
5.25
5.5
V
A
14
VHYST14
25
100
mV
A
14
tDEB
120
320
500
µs
A
14
tDEL
20
50
80
ms
A
13.1 Lower reset level
Reference SGND
16
V3.3V
2.97
3.13
V
A
13.2 Upper reset level
Reference SGND
16
V3.3V
3.47
3.63
V
A
13.3 Hysteresis
16
VHYST16
15
70
mV
A
13.4 Reset debounce time
16
tDEB16
120
320
500
µs
A
13.5 Reset delay
16
tDEL16
20
50
80
ms
A
13.6 Current
16
I3.3V
0.5
mA
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note: 1. If VS > 26 V the current has to be limited at 5 mA by an external resistor.
10 U6813B
4543B–AUTO–10/05
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