MJ3281A 데이터 시트보기 (PDF) - Motorola => Freescale

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MJ3281A

Complementary NPN-PNP Silicon Power Bipolar Transistor

Motorola => Freescale 

MJ3281A MJ1302A

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Emitter–Base Voltage

(IE = 100 µAdc, IC = 0)

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

Emitter Cutoff Current

(VEB = 7 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)

(VCE = 100 Vdc, t = 1 s (non–repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 3 Adc, VCE = 5 Vdc)

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 7 Adc, VCE = 5 Vdc)

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 15 Adc, VCE = 5 Vdc)

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1 Adc)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.

VCEO(sus)

200

—

VEBO

7

—

ICBO

—

—

IEBO

—

—

IEBO

—

—

—

Vdc

—

Vdc

50

µAdc

5

µAdc

25

µAdc

IS/b

4

1

hFE

60

60

60

60

60

45

12

VCE(sat)

—

Adc

—

—

—

—

125

175

—

175

—

175

—

175

115

175

—

—

35

—

—

3

Vdc

fT

—

30

—

MHz

Cob

—

—

600

pF

2

Motorola Bipolar Power Transistor Device Data

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