TPS830 데이터 시트보기 (PDF) - Toshiba

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TPS830

TOSHIBA Photo−IC Si Monolithic Photo−IC

Toshiba 

Note 4: Burst wave

30μs 55μs

TPS830(F)

VCC

GND

TON TOFF

Carrier frequency:fo = 455kHz

Duty = 50%

VOH

2.5V

VOL

Note 5: Electromagnetic sensitivity

TPS830(F)

d

50Ω

VP

ES = VP/d (VP-P / m)

Mount the device between two parallel boards separated by a distance of d.

Apply voltages modulated using frequencies ranging from 10kHz to 50MHz across the boards and read off

the voltage at which noise is generated in the output from the device.

(*) Usage in strong electromagnetic fields may affect the device.

Please evaluate product in this type of environment before releasing them for actual use.

Note 6: Radiation angle

Standard transmitter

L/2

θ

θ

L/2

L

3

2007-10-01

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