ADG706BRU(Rev0) 데이터 시트보기 (PDF) - Analog Devices

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ADG706BRU
(Rev.:Rev0)

CMOS, 2.5Ω
Low-Voltage, 8-/16-Channel Multiplexers

Analog Devices 

SPECIFICATIONS1

(VDD = 3 V ؎ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

ADG706/ADG707

Parameter

B Version

–40؇C

25؇C

to +85؇C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

On Resistance (RON)

On-Resistance Match Between

Channels (∆RON)

On-Resistance Flatness (RFLAT(ON))

LEAKAGE CURRENTS

Source OFF Leakage IS (OFF)

Drain OFF Leakage ID (OFF)

ADG706

ADG707

Channel ON Leakage ID, IS (ON)

ADG706

ADG707

6

11

± 0.01

± 0.1

± 0.01

± 0.4

± 0.1

± 0.01

± 0.4

± 0.1

0 V to VDD

12

0.4

1.2

3

V

Ω typ

Ω max

Ω typ

Ω max

Ω typ

nA typ

± 0.3

nA max

nA typ

± 1.5

nA max

±1

nA max

nA typ

± 1.5

nA max

±1

nA max

VS = 0 V to VDD, IDS = 10 mA;

Test Circuit 1

VS = 0 V to VDD, IDS = 10 mA

VS = 0 V to VDD, IDS = 10 mA

VDD = 3.3 V

VS = 3 V/1 V, VD = 1 V/3 V;

Test Circuit 2

VS = 3 V/1 V, VD = 1 V/3 V;

Test Circuit 3

VS = VD = 1 V or 3 V;

Test Circuit 4

DIGITAL INPUTS

Input High Voltage, VINH

Input Low Voltage, VINL

Input Current

IINL or IINH

CIN, Digital Input Capacitance

DYNAMIC CHARACTERISTICS2

tTRANSITION

Break-Before-Make Time Delay, tD

tON (EN)

tOFF (EN)

Charge Injection

Off Isolation

Channel-to-Channel Crosstalk

–3 dB Bandwidth

ADG706

ADG707

CS (OFF)

CD (OFF)

ADG706

ADG707

CD, CS (ON)

ADG706

ADG707

0.005

5

45

30

40

20

±5

–60

–80

–60

–80

25

36

13

180

90

200

100

2.0

0.4

± 0.1

75

1

70

28

V min

V max

µA typ

µA max

pF typ

ns typ

ns max

ns typ

ns min

ns typ

ns max

ns typ

ns max

pC typ

dB typ

dB typ

dB typ

dB typ

MHz typ

MHz typ

pF typ

pF typ

pF typ

pF typ

pF typ

VIN = VINL or VINH

RL = 300 Ω, CL = 35 pF, Test Circuit 5

VS1 = 2 V/0 V, VS16 = 0 V/2 V

RL = 300 Ω, CL = 35 pF;

VS = 2 V, Test Circuit 6

RL = 300 Ω, CL = 35 pF;

VS = 2 V, Test Circuit 7

RL = 300 Ω, CL = 35 pF;

VS = 2 V, Test Circuit 7

VS = 1 V, RS = 0 Ω, CL = 1 nF;

Test Circuit 8

RL = 50 Ω, CL = 5 pF, f = 10 MHz;

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 9

RL = 50 Ω, CL = 5 pF, f = 10 MHz;

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 10

RL = 50 Ω, CL = 5 pF, Test Circuit 9

RL = 50 Ω, CL = 5 pF, Test Circuit 9

POWER REQUIREMENTS

IDD

0.001

1.0

µA typ

µA max

VDD = 3.3 V

Digital Inputs = 0 V or 3.3 V

NOTES

1Temperature ranges are as follows: B Versions: –40°C to +85°C.

2Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. 0

–3–

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