TPC8108 데이터 시트보기 (PDF) - Toshiba
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TPC8108 Datasheet PDF : 7 Pages
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RDS (ON) – Ta
50
Common source
Pulse test
40
30
20
10
0
−80
VGS = −4 V
−10
ID = −11 A, −5.5 A, −2.5 A
ID = −11 A, −5.5 A, −2.5 A
−40
0
40
80
120
160
Ambient temperature Ta (°C)
10000
3000
Capacitance – VDS
Ciss
1000
300
Coss
Crss
Common source
100 VGS = 0 V
f = 1 MHz
Ta = 25°C
30
−0.1 −0.3
−1
−3
−10
−30
Drain-source voltage VDS (V)
−100
TPC8108
−100
−10
IDR – VDS
−10
−5
−3
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1.0
1.2
Drain-source voltage VDS (V)
Vth – Ta
−2.0
Common source
VDS = −10 V
−1.6
ID = −1 mA
Pulse test
−1.2
−0.8
−0.4
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2.0
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
−30
−30
Common source
VDD = −24 V
ID = −11 A
Ta = 25°C
Pulse test
−20
−20
−12 VDS
−10
−6
−12
−6
VGS
−10
VDD = −24 V
0
0
0
20
40
60
80
100
Total gate charge Qg (nC)
5
2002-03-12
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