TN6718 데이터 시트보기 (PDF) - Fairchild Semiconductor
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TN6718 Datasheet PDF : 3 Pages
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TN6718A
CBE
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0A. Sourced from Process 39. See TN6717A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJC
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN6718A
1
8
50
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor
tn6718a.lwp Rev A
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