TLP197D 데이터 시트보기 (PDF) - Toshiba
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TLP197D Datasheet PDF : 7 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP197D
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta≥25°C)
Peak forward current
(100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta≥25°C)
Junction temperature
Off-state output terminal voltage
A connection
On-state current B connection
C connection
On-state current A connection
derating
B connection
(Ta ≥25°C)
C connection
Output power
dissipation
A connection
B connection
C connection
Output power
dissipation
derating
(Ta ≥ 25°C)
A connection
B connection
C connection
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Isolation voltage
(AC, 60 s, R.H. ≤ 60 %)
(Note 1)
IF
∆IF/°C
IFP
VR
PD
△PD /°C
Tj
VOFF
ION
∆ION/°C
PO
ΔPO /°C
Tj
Topr
Tstg
Tsol
BVS
50
−0.5
1
5
50
-0.5
125
200
200
200
400
−2.0
−2.0
−4.0
300
-3.0
125
−40 to 85
−55 to 125
260
1500
mA
mA/°C
A
V
mW
mW/°C
°C
V
mA
mA/°C
mW
mW /°C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6 are shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Supply voltage
VDD
―
―
160
V
Forward current
IF
5
7.5
25
mA
On-state current
ION
―
―
130 mA
Operating temperature
Topr
−20
―
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-17
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