LH52256CH 데이터 시트보기 (PDF) - Sharp Electronics
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LH52256CH Datasheet PDF : 11 Pages
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LH52256C/CH
CMOS 256K (32K × 8) Static RAM
DC ELECTRICAL CHARACTERISTICS (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input leakage
current
ILI
VIN = 0 V to VCC
–1.0
1.0
µA
Output leakage
current
ILO
CE = VIH or OE = VIH
VI/O = 0 V to VCC
–1.0
1.0
µA
Operating supply
ICC
current
ICC1
Minimum cycle, VIN = VIL or VIH
II/O = 0 mA, CE = VIL
tRC, tWC = 1 µs, VIN = VIL or VIH,
II/O = 0 mA, CE = VIL
25
45.0
mA
10.0
ISB
Standby current
ISB1
CE ≥ VCC – 0.2 V
CE = VIH
0.6
40.0
µA
3.0
mA
VOL
Output voltage
VOH
NOTE:
Typical values at VCC = 5.0 V, TA = 25°C
IOL = 2.1 mA
IOH = -1.0 mA
0.4
V
2.4
AC ELECTRICAL CHARACTERISTICS
AC Test Conditions
PARAMETER
MODE
NOTE
Input pulse level
0.6 V to 2.4 V
Input rise and fall time
10 ns
Input and output timing Ref. level
1.5 V
Output load
1 TTL + CL (100 pF)
1
NOTE:
1. Including scope and jig capacitance.
READ CYCLE (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Read cycle time
tRC
70
ns
Address access time
CE access time
Output enable to output valid
Output hold from address change
tAA
70
ns
tACE
70
ns
tOE
35
ns
tOH
10
ns
CE Low to output active
tLZ
10
ns
1
OE Low to output active
tOLZ
5
ns
1
CE High to output in High impedance
tHZ
0
30
ns
1
OE High to output in High impedance
tOHZ
0
30
ns
1
NOTES:
1. Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV
transition from steady state levels into the test load.
4
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