LH53B16R00N 데이터 시트보기 (PDF) - Sharp Electronics
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LH53B16R00N Datasheet PDF : 6 Pages
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LH53B16R00
CMOS 16M (1M x 16/512K x 32) MROM
DC ELECTRICAL CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL
CONDITIONS
Input ‘High’ voltage
Input ‘Low’ voltage
Output ‘High’ voltage
Output ‘Low’ voltage
Input leakage current
Output leakage current
Operating current
Standby current
Input capacitance
Output capacitance
VIH
VIL
VOH
VOL
| ILI |
| ILO |
ICC1
ISB1
ISB2
CIN
COUT
IOH = -400 µA
IOL = 2.0 mA
VIN = 0 V to VCC
VOUT = 0 V to VCC
tRC = 120 ns
CE = VIH
CE = VCC - 0.2 V
f = 1 MHz, tA = 25°C
NOTES:
1. CE = VIH, OE = VIH, output is open
2. VIN = VIH, VIL, CE = VIL, output is open
MIN.
MAX.
UNIT
2.2
VCC +0.3
V
-0.3
0.8
V
2.4
V
0.4
V
10
µA
10
µA
180
mA
2
mA
300
µA
10
pF
10
pF
NOTE
1
2
AC ELECTRICAL CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Read cycle time
tRC
120
ns
Address access time
tAA
120
ns
Chip enable access time
tACE
120
ns
Page address access time
tAPA
50
ns
Output enable delay time
tOE
50
ns
Output hold time
tOH
5
ns
Output floating time
tCHZ
40
ns
1
tOHZ
40
ns
NOTE:
1. Determined by the time for the output to be opened. (Irrespective of output voltage)
AC TEST CONDITIONS
PARAMETER
Input voltage amplitude
Input signal rise time
Input signal fall time
Input/output reference level
Output load condition
RATING
0.4 V to 2.6 V
10 ns
10 ns
1.5 V
1TTL + 100 pF
4
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