TGA4530 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA4530

K Band High Linearity Power Amplifier

TriQuint Semiconductor 

TGA4530

TABLE III

THERMAL INFORMATION

PARAMETER

θJC Thermal Resistance

(channel to Case)

θJC Thermal Resistance

(channel to Case)

TEST CONDITIONS

Vd = 7 V

Id = 825 mA

Pdiss = 5.78 W

Small Signal

Vd = 7 V

Id = 1050 mA @ Psat

Pout = 1.6 W (RF)

Pdiss = 5.75 W

Tchannel θJC

(°C)

(°C/W)

150

14.7

150

14.7

Tm

(HRS)

1.0E+6

1.0E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 65oC baseplate temperature.

.

Median Lifetime (Tm) vs. Channel Temperature

1.E+13

1.E+12

1.E+11

1.E+10

1.E+09

1.E+08

1.E+07

1.E+06

1.E+05

1.E+04 FET3

25

50

75

100

125

150

175

200

Channel Temperature (°C)

3

TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com

Oct 2008 © Rev A

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