TGA4517-EPU 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA4517-EPU

Ka-Band Power Amplifier

TriQuint Semiconductor 

Advance Product Information

June 4, 2004

TGA4517-EPU

TABLE III

ELECTRICAL CHARACTERISTICS

(Ta = 25 0C, Nominal)

PARAMETER

Frequency Range

Drain Voltage, Vd

Drain Current (Quiescent), Idq

Gate Voltage, Vg

Small Signal Gain, S21

Input Return Loss, S11

Output Return Loss, S22

Output Power, Psat

TYPICAL

31 - 37

6

2

-0.5

15

14

12

35

UNITS

GHz

V

A

V

dB

dB

dB

dBm

TABLE IV

THERMAL INFORMATION

PARAMETER

RθJC Thermal Resistance

(channel to backside of carrier)

TEST

CONDITIONS

Vd = 6 V

Idq = 2 A

Pdiss = 12 W

TCH

(OC)

122.3

RTJC

(qC/W)

4.36

TM

(HRS)

1.2E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70°C baseplate temperature and with RF applied.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3

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