TDF8590TH 데이터 시트보기 (PDF) - NXP Semiconductors.
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TDF8590TH Datasheet PDF : 30 Pages
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NXP Semiconductors
TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
IN1P
IN1M
SGND
IN2P
IN2M
Input resistors are referred to SGND.
a. Internal circuitry
001aad841
IN1P
IN1M
Vin
IN2P
IN2M
OUT1
SGND
OUT2
power stage
mbl466
b. External connections
Fig 8. Input configuration for mono BTL application
7. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDD
supply voltage
VDDP1 and VDDA1 referred to
SGND1; VDDP2 and VDDA2 referred
to SGND2
VSS
negative supply voltage
VSSP1 and VSSA1 referred to
SGND1; VSSP2 and VSSA2 referred
to SGND2
VP
IOSM
Tstg
Tamb
Tj
VBOOT1
VBOOT2
VSTABI
supply voltage
non-repetitive peak output current
storage temperature
ambient temperature
junction temperature
voltage on pin BOOT1
referred to OUT1
voltage on pin BOOT2
referred to OUT2
voltage on pin STABI
referred to VSSD
TDF8590TH_2
Product data sheet
Rev. 02 — 23 April 2007
Min
−0.3
−34
−0.3
-
−55
−40
−40
[1] 0
[1] 0
[2] -
Max
Unit
+34
V
+0.3
V
+66
V
12
A
+150
°C
+85
°C
+150
°C
14
V
14
V
14
V
© NXP B.V. 2007. All rights reserved.
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