7025ERPQS35 데이터 시트보기 (PDF) - MAXWELL TECHNOLOGIES

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7025ERPQS35

(8K x 16-Bit) Dual Port RAM High-Speed CMOS

MAXWELL TECHNOLOGIES 

(8K x 16-Bit) Dual Port RAM High-Speed CMOS

7025E

PARAMETER

Input Capacitance: VIN = 0V1

Output Capacitance: VOUT = 0V1

1. Guaranteed by design.

TABLE 4. 7025E CAPACITANCE

SYMBOL

MIN

CIN

--

COUT

--

MAX

UNITS

5

pF

7

pF

PARAMETER

TABLE 5. 7025E DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = -55 TO 125 °C UNLESS OTHERWISE)

SYMBOL

MIN

MAX

UNITS

Input Leakage Current 1

Output Leakage Current 2

Standby Supply Current, Both ports TTL level inputs

-35

-45

ILI

--

±10

µA

ILO

--

±10

µA

ICCSB

--

mA

50

--

50

Standby Supply Current, Both ports CMOS level inputs

-35

-45

ICCSB1

µA

--

5000

--

5000

Operating Supply Current, Both ports Active

-35

-45

ICCOP

--

--

mA

320

280

Operating Supply Current, One Port Active, One Port Standby

ICCOP1

-35

--

-45

--

mA

190

180

Input Low Voltage

Input High Voltage

Output Low Voltage 3

Output High Voltage

VIL

--

0.8

V

VIH

2.2

--

VOL

--

0.4

V

VOH

2.4

--

1. VCC = 5.5V, VIN = GND to VCC, CS = VIH, VOUT = 0 to VCC.

2. VIH max = VCC + 0.3V, VIL min = -0.3V or -1V pulse width 50 ns.

3. VCC min, IOL = 4 mA, IOH = -4 mA.

TABLE 6. 7025E AC ELECTRICAL CHARACTERISTICS FOR READ CYCLE

(VCC = 5V ± 10%, VSS = 0V, TA = -55 TO 125 °C)

PARAMETER

SYMBOL

MIN

MAX

UNIT

Read Cycle Time

-35

-45

tRC

ns

35

--

45

--

1000586

12.19.01 Rev 2

All data sheets are subject to change without notice 3

©2001 Maxwell Technologies

All rights reserved.

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