TCDT1120 데이터 시트보기 (PDF) - Vishay Semiconductors
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TCDT1120 Datasheet PDF : 10 Pages
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TCDT1120/ TCDT1120G
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
0
IC
tp
100%
90%
96 11698
t
10%
0
tp
td
tr
ton (= td + tr)
tr
td
ton
pulse duration
delay time
rise time
turn-on time
ts
tf
toff
ts
tf
toff (= ts + tf)
t
storage time
fall time
turn-off time
Figure 3. Switching Times
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
0
0
96 11700
40
80
120
Tamb – Ambient Temperature( °C )
Figure 4. Total Power Dissipation vs. Ambient Temperature
1.5
1.4 VCE=5V
1.3 IF=10mA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11918
Tamb – Ambient Temperature (°C )
Figure 6. Relative Current Transfer Ratio vs. Ambient
Temperature
10000
1000
VCE=30V
IF=0
100
10
1
0
95 11038
25
50
75
100
Tamb – Ambient Temperature ( °C )
Figure 7. Collector Dark Current vs. Ambient Temperature
1000
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF - Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
100
VCE=5V
10
1
0.1
0.01
0.1
95 11040
1
10
100
IF – Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
Document Number 83532
Rev. 1.6, 26-Oct-04
www.vishay.com
5
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